Abstract:
The performance of Ammonium phosphate (NH4)3P04 Phosphorus Pent Oxide (P2O5) as n-type impurity phosphorus in the laboratory fabrication of p-n junction been compared, less sophisticated laboratory open-1 technique and available materials were used in the fabrication. Five silicon substrate. The theories and fabrication detail are given in the report measurement and test carried out on the fabricated samples revealed their 1-v characteristics diffusion profiles junction depths ballot in voltages. Junction widths and the equilibrium junction capacitance. The results of these measurement are summarized in the last chapter of the report . The two sets of samples fabricated generally showed good curves comparably to those fabricated with ( NH4)3P04.This is evident in the low reverse saturation current(10) exhibited by the L205 samples(1.021x10-5 ans 1.523x10-8A for sample 2 and3 respectively as against the rather high values showed by (NH4)3p04 samples (1.013x10-5A and 3.335x10A )respectively for sample 4 and 5) .it is however recommended that further work be done with (NH4)3P04 Samples (1.013x10-5 and 3.335 x 10- 4A. respectively for samples 4 and 5.It is however, recommended that further work be done with (NH4 )3PO4 under higher diffusion temperature ( 9500 c) it is hope that better result will be obtained.
