﻿The Growth and Characterization of CdS Thinfilm by Solution Technique	  Solution Technique

dc.contributor.author	Muma, Peter Nsuhate Ngou
dc.date.accessioned	2015-10-29T11:12:11Z
dc.date.available	2015-10-29T11:12:11Z
dc.date.issued	1991
dc.identifier.uri	http://hdl.handle.net/123456789/461
dc.description.abstract	We have successfully grown cadmium I1 sulphide (CdS)thin film on glass substrate, using Tioethanolamine (TEA) as canplexing agent, cadmium acetate (Cd(CH3COO)2. ZH20 1,ANiionle solution (NH3), and Thiourea (SC(NH2l2) at a pH of ll* We have shown that CdS cannot grow in acid medi~~rn. We have alscr succeasfully characterized CdS thin film with a \view of optbmizinq the growth parameters. A4bsorbancemeasurements revealed a CdS handgap of 2.43eV. Thickness of the films were measured and an optimum thickness of 15.6 x IO*? war obtained at ter 6 hours of deposition time, uslng Sml of 7.45M TEA and 1Oml in Cd(CH3COO)2.2H20. 1OmlSC(NH2)2.	en_US
dc.language.iso	en	en_US
dc.subject	Growth And Characterization	en_US
dc.subject	Thinfilm	en_US
dc.subject	Solution Technique	en_US
dc.title	The Growth and Characterization of CdS Thinfilm by Solution Technique Solution Technique	en_US
dc.type	Thesis	en_US